Modelling the Auger Recombination Rates of GaAs(1−x)Bix Alloys
نویسندگان
چکیده
We calculate the |Conduction, Heavy Hole (HH)〉 |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs(1−x)Bix alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9x9x9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band structure was then unfolded to give a true E-k relation. As predicted by experiment, there should be a decrease in the Auger recombination rate as the concentration of Bismuth increases ending in a suppression at greater than ∼11% Bismuth.
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